摘要
Device to read/write data from optical storage units have polarization insensitive character at two separated wavelength. Based on a key four-layer structure and some matching layers, an initial thin film stack system is constructed. After optimized alternately by simplex and conjugate graduate algorithm, a double- wavelength polarization insensitive beam splitter with splitting ratio of R ： T=50：50 at 650-nm wavelength and T ≥ 93% at 780-nm wavelength is gained. The design result shows that the difference between reflectivity of P and S light around wavelength range of 630-670 and 760-800 nm with incident angle of 40^-50~ is all very little. That indicates our design controls the polarization deviation well at two separate wavelengths with a reasonable range for both wavelength and incident nn^l~
Device to read/write data from optical storage units have polarization insensitive character at two separated wavelength. Based on a key four-layer structure and some matching layers, an initial thin film stack system is constructed. After optimized alternately by simplex and conjugate graduate algorithm, a double- wavelength polarization insensitive beam splitter with splitting ratio of R ： T=50：50 at 650-nm wavelength and T ≥ 93% at 780-nm wavelength is gained. The design result shows that the difference between reflectivity of P and S light around wavelength range of 630-670 and 760-800 nm with incident angle of 40^-50~ is all very little. That indicates our design controls the polarization deviation well at two separate wavelengths with a reasonable range for both wavelength and incident nn^l~
