摘要
以ZnO∶Ga2O3∶TiO2(97wt%∶1.5wt%∶1.5wt%)陶瓷靶作为溅射源,采用射频磁控溅射技术在玻璃衬底上制备了钛镓共掺杂氧化锌(TGZO)透明导电薄膜,通过X射线衍射仪、四探针仪和分光光度计测试表征,研究了溅射功率对TGZO薄膜晶体结构、电学性质和光学性能的影响。结果表明:所有TGZO薄膜均为六角纤锌矿结构,并且具有(002)择优取向,溅射功率对薄膜性能具有明显的影响。当溅射功率为200 W时,TGZO薄膜的结晶质量最好、电阻率最低、平均可见光透射率最高,品质因数最大(1.22×10-2Ω-1),其光电综合性能最佳。另外,通过光谱拟合方法研究了溅射功率对TGZO薄膜折射率和消光系数的影响,并利用Tauc关系式计算了样品的光学能隙。
Ti and Ga codoped ZnO(TGZO) thin films were deposited on glass substrates by radiofrequency magnetron sputtering technique using a sintered ceramic target of ZnO∶ TiO2∶ Ga2O3(97wt%∶ 1.5wt% ∶ 1.5wt%) as sputtering source.The influence of sputtering power on structural,electrical and optical properties of the TGZO thin films was investigated by X-ray diffraction,four-point probe and UVvisible spectrophotometer.The results show that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the(002) direction.The sputtering power significantly affects the microstructure and electro-optical characteristics of the deposited films.The TGZO thin film prepared at the sputtering power of 200 W possesses the highest optoelectrical performance,which have the best crystal quality,the lowest resistivity,the highest average visible transmittance and the maximum figure of merit(1.22 × 10-2 Ω-1).Furthermore,the refractive index and extinction coefficient of the thin films were determined by the method of optical spectrum fitting,and the optical energy gaps were calculated using Tauc's relation.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第7期1353-1359,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(11147014)
湖北省自然科学基金(2011CDB418)
中南民族大学研究生创新基金(chxxyz120023)
中南民族大学学术团队项目(XTZ09003)
关键词
氧化锌薄膜
溅射功率
结晶质量
电阻率
透过率
ZnO thin film
sputtering power
crystal quality
resistivity
transmittance