适用于晶体硅太阳能电池的HF/LF-PECVD SiNx:H薄膜的特性研究

Study on the Properties of HF/LF - PECVD SiNx: H Films for Crystalline Silicon Solar Cells

介绍了使用HF/LF-PECVD方法制备适用于晶体硅太阳能电池的SiNx:H薄膜.在温度、压强、射频功率和板极间距固定的条件下,通过改变气体流量,制备不同特性的薄膜,并测量薄膜的厚度均匀性、薄膜的折射率和基底的少数载流子寿命的变化,从这三个方面对SiNx:H薄膜的特性进行研究.

In this study, HF/LF - PECVD method were used to deposited SiNx： H films for crystalline silicon solar ceils. With temperature, pressure, RF power and gap between showerhead and wafer fixed, SiNx：H films which have different properties were deposited. And, the properties of these films were studied by the measurement and analysis of the thickness uniformity; reflective index and minority carrier lifetime, during the experiments.