ESD对微波半导体器件损伤的物理机理分析

Analysis of failure mechanism of microwave semiconductor devices caused by ESD

为了得到电磁脉冲对微波半导体器件的损伤规律,进而研究器件的静电放电损伤机理,首先对半导体器件静电放电的失效模式即明显失效和潜在性失效进行了介绍;其次分析了器件ESD损伤模型;最后通过对器件烧毁的物理机理进行分析,得到器件在静电放电应力下内在损伤原因。在ESD电磁脉冲作用下,器件会产生击穿效应,使内部电流密度、电场强度增大,导致温度升高,最终造成微波半导体器件的烧毁。

In order to obtain the damage rule of microwave semiconductor devices caused by electromagnetic pulse and study the electrostatic damage mechanism of the devices, the failure mode of semiconductor devices caused by ESD, such as apparent fail- ure and potential failure, is introduced. The damage modeling is analyzed. Finally, the inherent damage reason of the device under electrostatic discharge stress is obtained by analyzing the physics mechanism of the burned device. Breakdown may hap- pen under the action of ESD EMP, the internal electric field and the current density of the device increase, which cause the tem- perature rise and result in microwave semiconductor device burned.