肖特基势垒对CdS/CdTe薄膜电池J-V暗性能的影响

A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells

采用数学模拟方法分析了不同背接触势垒高度(φb)对于CdS/CdTe薄膜电池的J-V(电流密度-电压)方程的影响,得出了势垒高度与roll-over的变化对应关系.采用相应Cu/Mo背电极的CdS/CdTe薄膜电池在220—300K的变温J-V曲线的数值分析与理论分析相对照,分析了背势垒对于J-V曲线拟合参数的影响.修正了φb与反向饱和电流(Jb0)关系式,理论与实验符合得非常好.

Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height （φb） on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height （φb） and the reverse saturation current density （Jb0） is revised and the experimental data are consistent with the simulation results very well.