博莱霉素在Ni/GC离子注入修饰电极上的电化学行为及其应用

ELECTROCHEMICAL BEHAVIOR OF BLEOMYCIN AND ITS APPLICATION AT Ni/GC ION IMPLANTATION MODIFIED ELECTRODE

目的:研究博莱霉素在Ni/GC离子注入修饰电极上的电化学行为及其应用。方法:博莱霉素在01mol·L-1HAcNaAc(pH462)缓冲溶液中,用离子注入镍的修饰玻碳电极为工作电极进行伏安测定。结果:得到一良好的还原峰,峰电位Ep=-116V(vs.SCE)。峰电流与博莱霉素浓度在10×10-6～14×10-5mol·L-1范围内成线性关系。检出限为80×10-7mol·L-1。并用于尿样的测定,得到满意的结果。用线性扫描和循环伏安法研究了体系的电化学行为。用奥歇电子能谱(AES)和光电子能谱(XPS)等表面分析技术检测了注入电极表面的元素组成、价态和深度分布,对离子注入电极的催化性质进行了探讨。结论:体系属两电子还原的不可逆过程。

AIM: To sdudy the electrochemical behavior of bleomycin at Ni/GC electrode and its application. METHODS: With Ni/GC ion implantation modified electrode as working electrode, the behavior of bleomycin was studied by voltammetry in 0 1 mol·L -1 HAc NaAc (pH 4 62) buffer solution. RESULTS: A sensitive reductive peak of bleomycin was obtained by linear sweep voltammetry. The peak potential was -1 15 V (vs.SCE). The peak current was proportional to the concentration of bleomycin over the range of 1 0×10 -6 ～1 4×10 -5 mol·L -1 . The limit of detection was 8 0×10 -7 mol·L -1 . The behavior of the reduction peak was studied and applied to the determination of bleomycin in urine. CONCLUSION: The reduction process was irreversible. The element composition, atomicity form and depth of distribution at the surface of Ni/GC electrode were determined by Auger electron spectroscopy (AES) and X ray photoelectron spectroscopy(XPS). The catalysis behavior at Ni/GC ion implantation modified electrode was also studied.