摘要
A compact passively Q-switched Yb：YAG microchip laser is demonstrated. Featuring a semiconductor saturable-absorber mirror （SESAM）, the laser yields pulses of 219 ps when the length of the microchip Yb：YAG crystal is 100 #m and the beam quality is M2 〈 1.3. To the best of our knowledge, pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb：YAG microchip lasers currently available.
A compact passively Q-switched Yb：YAG microchip laser is demonstrated. Featuring a semiconductor saturable-absorber mirror （SESAM）, the laser yields pulses of 219 ps when the length of the microchip Yb：YAG crystal is 100 #m and the beam quality is M2 〈 1.3. To the best of our knowledge, pulses from the proposed laser are the shortest Q-switching pulses obtained from Yb：YAG microchip lasers currently available.
