ICP-CVD制备a-CHON及光学性能分析

Characterization of Amorphous CHON Films Grown by Inductively Coupled Plasma Chemical Vapor Deposition

采用外置电感耦合等离子体化学气相沉积法,以高纯CH4/N2/CO2/H2作为反应气体,制备出非晶的a-CHON薄膜。研究了放电功率对薄膜沉积速率、表面形貌及光学性能的影响。结果表明沉积速率随着放电功率的增加而增加,而非线性增加;原子力显微镜分析结果表明放电功率对薄膜粗糙度有较大的影响;红外光谱分析表明了薄膜内部存在C-O,C=O,C≡N以及C-H键;紫外-可见-近红外光分析表明,薄膜的光学带隙随放电功率的增加而减小;薄膜折射率在可见光区的色散图表明,折射率随入射光频率的增加而减小,出现反常色散关系;而在同一波长下薄膜的折射率先随放电功率的增加而减小,而后又有所增加。

The amorphous hydrogenated carbon nitride oxide （a-CHON） films were synthesized by inductively cou- pled plasma chemical vapor deposition （ICP-CVD）. The effects of the discharge power on the mierostruetures and optical properties of the films were evaluated. The a-CHON films were characterized with Fourier transfoma infrared spectroscopy, ultraviolet-visible-near-infrared spectroscopy, and atomic force microscopy. The results show that the discharge power strongly affected the mierostruetures and properties of the a-CHON films. For instance, as the discharge power increased, the deposition rate increased; the surface increasingly roughened; the optical band-gap slowly narrowed;and the refractive index changed in a decrease-increase mode. The C-O, C = O, C≡N and C-H bonds were observed to coexist in the films, and the refractive index increased with a decrease of the frequency of the visible incident light.