期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

溅射功率对Mg_(0.2)Zn_(0.8)O∶Al紫外透明导电薄膜结构与性能的影响

EFFECTS OF SPUTTERING POWER ON MICROSTRUCTURE AND PROPERTIES OF Mg_(0. 2)Zn_(0. 8)O∶ Al UV-TRANSPARENT CONDUCTING THIN FILMS
下载PDF
导出
摘要 以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用磁控溅射工艺室温条件下在石英玻璃衬底上制备Mg0.2Zn0.8O∶Al紫外透明导电薄膜。研究溅射功率对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响。测试结果表明:溅射功率不会明显影响薄膜中的成分及其浓度,并与靶材基本吻合;不同溅射功率下Mg0.2Zn0.8O∶Al薄膜均具有非常好的c轴择优取向生长特性,透光区域均扩展到紫外区域,而且随溅射功率从100W增大到200W,薄膜的晶粒有所增大,结晶程度明显提高,电阻率从50Ω·cm降低到不足1Ω·cm,透光率无明显差别,约为89%,带隙宽度略有减小,光吸收边略向长波方向移动,但溅射功率达到250W以后,薄膜质量有所下降,粗糙度增大,电阻率略有回升,透光率有所降低。 Mg0.2Zn0.8O：A1 UV-transparent conducting thin films were prepared on quartz glass by radio frequency magnetron sputtering at room temperature. The effects of sputtering power on microstructure and photoelectric properties ofMg0.2Zn0.8O：A1 films were investigated. The experimental results show that the Mg/A1/Zn atomic ratio in films is accordant to the doping level in theMg0.2Zn0.8O：A1 ceramic targets, Mg0.2Zn0.8O：A1 thin films exhibit high preferred c-axis-orientation and high transmittance in UV region. With the increase of sputtering power from 100W to 200W, the grain size increase slightly, the resistivity of Mg0.2Zn0.8O：A1 decrease rapidly from to less cm, the band gap decrease appreciably with a transparency of about 89%. However, the resistivity ofMg0.2Zn0.8O：A1 thin films increase and the transparency decrease slightly when the sputtering power is over 250W.
作者 王华 燕红 黄竹 许积文 杨玲
机构地区 桂林电子科技大学信息材料广西重点实验室 郑州铁路职业技术学院公共教学部
出处 《太阳能学报》 EI CAS CSCD 北大核心 2013年第8期1317-1322,共6页 Acta Energiae Solaris Sinica
基金 广西教育厅科研项目(200734) 广西信息材料重点实验室主任基金(0710908-05-Z)
关键词 紫外透明导电薄膜Mg0 2Zn0 8O A1磁控溅射 溅射功率 光电性能 UV-transparent conducting films Mg0.2Zn0.8O：A1 RF magnetron sputtering sputtering power photoelectric property
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献11

  • 1Orita M, Hiramatsu H, Ohta H. Deep-UV transparent β-Ga2O3 thin films at low temperature [ J]. Thin Solid Films, 2002, 411: 134-139.
  • 2Ohtomo A, Kmaaskai M, Koida T, et al. MgxZn1-xO as a Ⅱ-Ⅵ widegap semieonductor alloy [ J ]. Applied Physcis Letters, 1995, 72(19): 2466-2468.
  • 3Kazuto K, Kenji H, Ippei N, et al. Molecular beam epitaxial growth of wide bandgap ZnMgO Alloy films on ( 111 ) -oriented Si substrate toward UV-detector applica- tions [ J ]. Journal of Crystal Growth, 2005, 278 ( 1- 4) : 288-292.
  • 4Yang W, Hullavarad S S, Nagaraj B, et al. Compositionally-tuned epitaxial cubic Mgx Zn1-x, O on Si (100) for deep ultraviolet photodetectors [ J ]. Applied Physcis Letters, 2003, 82 (20) : 3424-3426.
  • 5Choopun S, Vispute R D, Yang W, et al. Realization of band gap above 5.0eV in metastable cubic-phase MgxZn1-x O alloy films [ J ]. Applied Physcis Letters, 2002, 80(9) : 1529-1531.
  • 6Minemoto T, Negami T, Nishiwaki S, et al. Preparation of Zn1-x Mgx O films by radio frequency magnetron sputtering[ J ]. Thin Sohd Films, 2000, 372 ( 1-2 ) : 173-176.
  • 7Cohen D J, Ruthe K C, conducting Zn-xMgxO: ( A1, of Applied Physcis, 2004, Barnet S A. Transparent In) thin films [ J ]. Journal 96 ( 1 ) : 459-467.
  • 8Cornelius S, Vinnichenko M, Shevchenko N, et al. Achieving high free electron mobility in ZnO: A1 thin films grown by reactive pulsed magnetron sputtering [J]. Applied Physcis Letters, 2009, 94(4) : 042103- 042105.
  • 9Burhan B, Kevin L, Robert B. High temperature stability of postgrowth annealed transparent and conductive ZnO: A1 films [ J ]. Applied Physeis Letters, 2008, 93 (2) : 022104-022106.
  • 10王华,黄竹,许积文,杨玲.Mg掺杂量和退火温度对Mg_xZn_(1-x)O∶Al紫外透明导电薄膜结构与性能的影响[J].人工晶体学报,2010,39(5):1206-1210. 被引量：2

二级参考文献10

  • 1Orita M,Hiramatsu H,Ohta H.Deep-UV Transparent β-Ga2O3 Thin Films at Low Temperature[J].Thin Solid Films,2002,411:134-139.
  • 2Kazuto K,Kenji H,Ippei N,et al.Molecular Beam Epitaxial Growth of Wide Bandgap ZnMgO Alloy Films on (111)-oriented Si Substrate Toward UV-detector Applications[J].J.Cryst Growth,2005,278(1-4):288-292.
  • 3Ohtomo A,Kmaaskai M,Koida T,et al.MgxZn1-xO as a Ⅱ-Ⅵ Widegap Semieonductor Alloy[J].Appl.Phys.Lett.,1998,72(19):2466-2468.
  • 4Yang W,Hullavarad S S,Nagaraj B,et al.Compositionally-tuned Epitaxial Cubic MgxZn1-xO on Si (100) for Deep Ultraviolet Photodetectors[J].Appl.Phys.Lett.,2003,82(20):3424-3426.
  • 5Choopun S,Vispute R D,Yang W,et al.Realization of Band Gap above 5.0 eV in Metastable Cubic-phase MgxZn1-xO Alloy Films[J].Appl.Phys.Lett.,2002,80(9):1529-1531.
  • 6Minemoto T,Negami T,Nishiwaki S,et al.Preparation of Zn1-xMgxO Films by Radio Frequency Magnetron Sputtering[J].Thin Solid Films,2000,372(1-2):173-176.
  • 7Cohen D J,Ruthe K C,Barnet S A.Transparent Conducting Zn1-xMgxO:(Al,In) Thin Film[J].J.Appl.Phys.,2004,96(1):459-467.
  • 8Cornelius S,Vinnichenko M,Shevchenko N,et al.Achieving High Free Electron Mobility in ZnO:Al Thin Films Grown by Reactive Pulsed Magnetron Sputtering[J].Appl.Phys.Lett.,2009,94(4):042103.
  • 9Burhan B,Kevin L,Robert B.High Temperature Stability of Postgrowth Annealed Transparent and Conductive ZnO:Al Films[J].Appl.Phys.Lett.,2008,93(2):022104.
  • 10Wang H,Xu J W,Ren M F,et al.Room Temperature Deposition and Properties of ZnO:Al Thin Films[J].J.Mater.Sci.Materials in Electronics,2008,19(11):1135-1139.

共引文献1

太阳能学报
2013年 第8期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部