期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

整流管PN结结温的实时在线测量方法 被引量：1

下载PDF
导出
摘要 半导体器件的温升是影响其正常工作和使用寿命以及导致其失效的重要原因。通过对整流管PN结工作状态的分析,根据整流管工作过程中"导通时间短,截止时间长"的特点,提出了快速判断整流管由导通到截止的时间点,由此确定导入测试电流时刻,并利用PN结的电特性(热敏电压)测量PN结结温的一种在线实时测量方法。
作者 胡红钱 张文成
机构地区 浙江工业职业技术学院机电分院 绍兴旭昌科技企业有限公司
出处 《电子世界》 2013年第17期60-61,共2页 Electronics World
关键词 整流管 结温 实时在线测量
分类号 TN323.4 [电子电信—物理电子学]
  • 相关文献

参考文献10

  • 1蒋家久.大功率整流器换流问题研究[J].机车电传动,2003(6):13-16. 被引量：7
  • 2崔泽英.一种基于结温保护的LED驱动设计[J].电子技术设计与应用,2011(9):26-27.
  • 3秦贤满.电力半导体器件结温的计算和测试[J].电工技术杂志,1995,17(4):22-24. 被引量：5
  • 4ABDELKADER H I,HAUSIEN H H,MARTIN J D.Temprature rise and thermal rise-time measure- meters of a semiconductor laser diode[J],Rev.ScJ. Instrum,1992,63(3) :2004-2007.
  • 5SETSUKO M,HIROSHIN.Adding a heat bypass improves the thermal characteristics of a 50μm spaced 8-beam laser diode array[J].J.Appl.Phys,1992,72(6):2514- 2516.
  • 6EPPERLEIN P W.Mapping of local temperatures on mirrors og GaAs/A1GaAs laser diodes[C]. Proceedings of 17th international symposium of Gallium Arsenide and Related Compounds,IOP Conference Series,1990,633:112.
  • 7GU Y M,NaDARAJAH N.A non-contact method for determining junction temperature of phosphor-converted white LEDs [J] .SPIE,2004,5187:107-114.
  • 8黄昆,谢希德.半导体物理学[M].北京:科学出版社(第一版),1958(8).
  • 9温怀疆,牟同升.脉冲法测量LED结温、热容的研究[J].光电工程,2010,37(7):53-59. 被引量：15
  • 10黄锋,谭山PN结结温系数实验报告[J].计量与测量技术,2000(6):11-12.

二级参考文献16

  • 1余彬海,王浩.结温与热阻制约大功率LED发展[J].发光学报,2005,26(6):761-766. 被引量：71
  • 2张跃宗,冯士维,谢雪松,李瑛,杨集,孙静莹,吕长志.半导体功率发光二极管温升和热阻的测量及研究[J].Journal of Semiconductors,2006,27(2):350-353. 被引量：18
  • 3雷勇,范广涵,廖常俊,刘颂豪,李述体,黄琨.功率型白光LED的热特性研究[J].光电子．激光,2006,17(8):945-947. 被引量：23
  • 4EIA/JEDEC Standard JESD51-1.Integrated Circuits Thermal Measurement Method-Electrical Test Method(Single Semiconductor Device)[S].USA:ELECTRONIC INDUSTRIES ALLIANCE,1995:3-7.
  • 5Han-Youl Ryu,Kyoung-Ho Ha,Jung-Hye Chae,et al.Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics[J].Appl Phys Lett(S0003-6951),2005,87(9):093506-1-093506-3.
  • 6XI Yah-gang,GESSMANN Thomas,XI Jing-qun,et al.Junction temperature in ultraviolet Light-emitting diodes[J].Jpn J Appl Phys Part 1(S0021-4922),2005,44(10):7260-7266.
  • 7Chhajed S,XI Y,Gessmann Th,et al.Junction temperature in light-emitting diodes assessed by different methods[J].Proc.of SPIE(S0277-786X),2005,5739:16-24.
  • 8Gu Y,Narendran N.A non-contact method for determining junction temperature of phosphor-converted white LEDs[J].Proc.of SPIE(S0277-786X),2004,5187:107-114.
  • 9Ishikawa H,Fujiwara T,Fukiwara K,et al.Accelerated agingtest of Gal-xAlxAs DH lasers[J].Journal of Appfied Physics(S0021-8979),1999,50(4):2518-2522.
  • 10Yuqin Zong,Yoshi Ohno.New practical method for measurement of high-power LEDs[c] //Proe.CIE Expert Symposium on Advances in Photometry and Colorimetry.CIE x033.Turin,Italy,July 7-8,2008:102-106.

共引文献24

同被引文献12

  • 1朱阳军,苗庆海,张兴华,Yang Lieyong,卢烁今.半导体功率器件结温的实时测量和在线测量[J].Journal of Semiconductors,2007,28(6):980-983. 被引量：6
  • 2KUBALL M, RIEDEL G J, POMEROY J W, et al. Time-resolved temperature measurement of A1GaN/GaN electronic devices using micro-Raman spectroscopy [ J]. IEEE Electron Device Letters, 2012, 28 (2) : 86-89.
  • 3PROFUMO F, ZHU Y J. Transient junction temperature evaluation of high power diode (thyristor) transient cur- rent [ J ]. Converter Technology and Electric Traction, 2000 (2): 20-26 (in Chinese).
  • 4ABDULKHAEV O A, YODGOROVA D M, KARIMOV A V, et al. Investigation of the heat transfer processes under the action of pulse power [ J]. Journal of Engi- neering Physics and Thermophysics, 2012, 85 (4): 851-855.
  • 5陈焕庭.功率型LED热学特性分析以及可靠性研究[D].厦门:厦门大学,2011.
  • 6ZHU Y J, MIAO Q H, ZHANG X H, et al. Real timemeasurement and online measurement of junction tempera- ture of semiconductor power devices [ J]. Semiconductor Journal, 2007, 28 (6): 980-983 (in Chinese).
  • 7HUH Q, ZHANG W C. Real time on-line measuring me- thod for rectifying junction temperature of rectifier tube [ J ]. Electronic World, 2013 (17): 60-61 (in Chinese).
  • 8MUSALLAM M, JOHNSON C M. Real-time compact thermal models for health management of power electro- nics [J]. IEEE Transactions on Power Electronics, 2012, 25 (6): 1416-1425.
  • 9LAI P, WANG Y S. DC and dynamic thermal characte- ristics detection of pulsed power devices [ J]. Reliability and Environmental Testing of Electronic Products, 2002 (5): 1-5 (in Chinese).
  • 10XI Y, SCHUBERT E F. Junction-temperature measure- ment in GaN ultraviolet light-emitting diodes using diode forward voltage method ~ J]. Applied Physics Letters, 2014, 85 (12): 2163-2165.

引证文献1

电子世界
2013年 第17期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部