氦等离子体前处理对多晶硅薄膜性能的影响

Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films

采用微波电子回旋共振等离子体增强磁控溅射(microwave electron cyclotron resonance plasma-enhanced magnetron sputtering,ECR-PEMS)和电子回旋共振等离子体辅助化学气相沉积(microwave electroncyclotron resonance chemical vapor deposition,ECR-CVD)技术,分别在单晶硅片(100)基底上低温制备了多晶硅薄膜.采用拉曼光谱仪、X射线衍射仪以及原子力显微镜对薄膜微观结构及表面形貌进行表征,研究纯氦等离子体基底前期处理对所沉积薄膜性能的影响.结果表明,氦等离子体前处理技术能大幅提高多晶硅薄膜结晶度和颗粒尺寸,明显改善ECR-CVD法所得多晶硅薄膜的微观结构特性和表面形貌.

Polycrystalline silicon thin films deposited on p-type（100） silicon wafer substrates were prepared by means of microwave electron cyclotron resonance plasma-enhanced magnetron sputtering（ECR-PEMS） and microwave electron cyclotron resonance chemical vapor deposition（ECR-CVD） at low temperatures in the present work.To characterize the microstructure and surface morphology of the films,the Raman spectroscopy,X-ray diffraction and atomic force microscopy were used.The study focuses on the effect of pure helium plasma substrate pre-treatment on the deposited film properties.The results show that the film crystallinity and grain size are obviously enhanced by the helium plasma pre-treatment in both deposition processes.At the same time,the microstructure and surface morphology of polycrystalline silicon film with ECR-CVD are improved.