摘要
利用微波等离子体化学气相淀积法（MPCVD）,在硅基片上合成硼掺杂金刚石薄膜。研究B2O3从1000~5000 ppm不同浓度对场发射性能影响。随硼浓度地增加,纳米金刚石（NCD）薄膜的场发射性能得到改善。且场发射性能的增强归功于更好的电导率和金刚石薄膜的纳米特性。
Boron doped diamond films were synthesized on silicon substrates by MPCVD technique.The effect of B203concentration varied from 1000to5000ppm on the field emission characteristics was examined.The field emission properties of NCD films were observed to improve upon increasing boron concentration.The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.
出处
《科技通报》
北大核心
2013年第8期16-18,共3页
Bulletin of Science and Technology
