摘要
报道了一种采用非对称布拉格反射波导结构的边发射半导体激光器,激光器n型波导采用分布布拉格反射镜,光场通过光子带隙效应限制在低折射率中心腔内,这可有效扩展光模式尺寸并保持稳定的模式特性。激光器p面则利用全反射原理进行光限制,减小了光场与p型区的交叠,从而使器件电阻和内部损耗降低。制备的3μm条宽、未镀膜及未封装的器件在室温条件下,连续和脉冲工作总输出功率分别可超过160mW和400mW,最高功率受热扰动限制。激光器激射波长为995nm,阈值电流特征温度为121K。计算和测量的垂直方向远场光斑证明了器件工作于光子晶体缺陷模式。
An edge-emitting diode laser based on the asymmetric Bragg reflection waveguide is reported, which utilizes Bragg reflectors as the n-doped waveguide. The optical field is confined in the low-index core layer through photonic bandgap （PBG） effect, resulting in large mode expansion and stable mode characteristics. The reduced overlap of the optical field and the p-doped total internal reflection （TIR） waveguide helps to increase the efficiency of the laser. The 3-μm-wide ridge lasers with uncoated facets demonstrated more than 160 mw and 400 mW power in continuous-wave and pulse operation respectively, limited by the thermal rollover. The operating wavelength of the laser is 995 nm. The device shows high threshold current characteristic temperature of 121 K. The calculated and measured far-field distributions in the vertical direction reveal that the laser operates at the PBG mode.
出处
《激光与光电子学进展》
CSCD
北大核心
2013年第9期106-111,共6页
Laser & Optoelectronics Progress
基金
国家自然科学基金(61076064
61176046)
中国科学院"百人计划"项目
