基于串联模型的Si/Ge超晶格法向热导率

The Out-of-plane Thermal Conductivity of Si/Ge Superlattice Based On the Serious Model

超晶格半导体材料广泛用于热电、光电、微电子器件,研究它的热导率和传热性能很有必要。本文采用热阻串联模型计算Si/Ge超晶格热导率,在模型中考虑界面影响以及声子透射率随波长的变化。在固定周期厚度时,Si和Ge厚度比例变化不影响超晶格热导率。随着温度升高,热导率趋于定值,界面散射对于声子传输的作用减小,而U过程的作用增加。

The superlattice semiconductor materials are widely used in thermal, optical, microelec- tronic devices. Therefore it is necessary to study its thermal conductivity and heat transfer properties. A serious model of thermal resistance was used to calculate the thermal conductivity of Si/Ge superlattice that considers the effect of interfaces and phonon transmission variation with wavelength. The change of thickness ratio of Si and Ge films will not affect the thermal conductivity of the superlattices for fixed period. With increasing temperature, the thermal conductivity approaches to a constant value, the role of interface scattering of phonon propagation decreases, and the U progress is getting more and more important.