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MEMS加速计的SOIC封装技术研究

The Study for SOIC Package Technology of MEMS Accelerometer
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摘要 文中通过研究MEMS(微机电系统)加速计在SOIC封装(小外形集成电路封装)下的特性,针对MEMS芯片断裂故障的原因分析了影响PPM(百万分比的缺陷率)性能的主要封装工艺步骤。其中感应单元固晶胶的硬度是引起芯片断裂的主要参数,通过反向工程确定了可以同时满足感应单元固有频率和封装可靠性要求的固晶材料。在试验中采用固晶胶E后,MEMS加速计的SOIC封装呈现出更加强韧的特性。此研究对于改善MEMS加速计的PPM性能有一定参考价值。 The paper studied the characteristic of MEMS (microelectromechanical systems) accelerometer in SOIC package, it analysed the main packaging process steps which affect the PPM based on the reason of MEMS chip fracture failure. Induction unit solid crystal glue hardness is the main parameters which cause chip fracture, by reverse engineering, solid crystal material which can meet both the induction unit natural frequency and package reliability requirements can be confirmed. Test using a solid crystal glue E, the MEMS accelerometer SOIC package showing a more robust features. This study has some reference value for improving MEMS accelerometer PPM.
出处 《电子与封装》 2013年第8期5-8,共4页 Electronics & Packaging
关键词 MEMS SOIC 加速计 封装 MEMS SOIC accelerometer package
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参考文献5

  • 1蔡梅妮,林友玲,车录锋,苏荣涛,周晓峰,黎晓林.用于器件级真空封装的MEMS加速度传感器的设计与制作[J].传感器与微系统,2012,31(12):107-110. 被引量:2
  • 2Hsu, T R. MEMS Packaging[M]. T R. Hsu, Institute of Electrical Engineers, United Kingdom, 2004.
  • 3Hsu, T R. MEMS and Microsystems Design and Manufacture[M]. McGraw-Hill, 2002.
  • 4Tai-Ran Hsu. RELIABILITY IN MEMS PACKAGING[C]. 44th International Reliability Physics Symposium, San Jose, CA, March 2006. 26-30.
  • 5MEMS Reliability Newsletter on MEMS Fatigue[EB/OL]. Exponent, 2001,1 (1). www.exponent.com/practices/ MEMS/MEMS vl l.pdf.

二级参考文献15

  • 1李锦明,张文栋,李林.电容式微机械陀螺品质因子测试方法研究[J].中北大学学报(自然科学版),2006,27(4):357-360. 被引量:6
  • 2Bao M H, Wang W Y. Future of micro-electro-mechanical systems(MEMS) [ J]. Sensors and Actuators A:Physical, 1996,56(1 —2) :135-141.
  • 3Levinzon F A. Fundamental noise limit of piezoelectric accelero-meter[ J]. IEEE Sensors Journal,2004 ,4( 1) :108 —111.
  • 4Gabrielson T B. Mechanical-thermal noise in micromachined a-coustic and vibration sensors [ J]. IEEE Transactions on Elec-tron Devices, 1993, 40(5) : 903 —909.
  • 5Shahriar R M, Chitteboyina M M, Butler D P,et al. Device-levelvacuum packaging for RF MEMS [ J], Micro-Electro-MechanicalSystems,2010,19(4) :911 一918.
  • 6Xiao F,Che L F,Xiong B,et al. A novel capacitive accelerometerwith an eight-beam-mass structure by self-stop anisotropic etchingof( 1 0 0 ) silicon [ J]. Journal of Micromechanics and Microengi-neering,2008 ,18(7) :1-7.
  • 7Qu H,Fang D,Xie H. A monolithic CMOS-MEMS 3-axis accele-rometer with a low-noise,low-power dual-chopper amplifier[ J].IEEE Sensors Journal,2008 ,8(9) :1511 —1518.
  • 8Jiang X. Capacitive position-sensing interface for micromachinedinertial sensors [ D]. Berkley, California : University of California,2003.
  • 9Bao M H. Analysis and design principles of MEMS devicesf M].Shanghai; Fudan University Press,2005:135 —136.
  • 10Selvakumar A, Goldberg H D, Yu D, et al. Sensor design andprocess:US,274,079 B2[P].2000-09-21.

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