多晶硅薄膜的等离子氢化新工艺

A Novel Plasma Hydrogenation Technique for Polycrystalline Silicon Thin Films

根据多晶硅薄膜氢化的微观机理 ,提出改进氢化效果的工艺方法。在不增加设备投资的情况下 ,采用该方法能够明显提高多晶硅薄膜的氢化效果 ,从而提高薄膜晶体管的性能 ,ION/ IOFF从1 0 3量级增加到 1 0 5量级 ,氢化工艺的处理时间也相应缩短。

The plasma hydrogenation mechanism of poly-Si thin film is investig ated and a novel hydrogenation technique for poly-Si thin film was presented. Using this technique, hydrogenation of poly-Si thin film is effectively enhanc ed and performances of poly-Si TFTs are improved. I ON/ I OFF of the poly-Si TF T is raised from 10 3 to 10 5. And the hydrogenation time is also reduc ed.