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半导体量子线场效应管研究现状及趋势 被引量：4

Status and development trend of semiconductor quantum-wires field-effective transistors
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摘要 综述了 - 族化合物半导体量子线场效应管的研究进展情况 ,阐述了量子线结构场效应管的制作工艺原理、制备方法、材料结构及器件的电学性能。指出了当前存在的工艺困难 ,并展望了进一步的发展趋势。 The lately development of Ⅲ-Ⅴ compound semiconductor quantum-wires field-effective transistors(QWRs-FET)is presented in this paper.The technique principles,fabrication methods,material structure as well as the electronic characteristics of the device are described.The difficulties involving fabrication technique are discussed.
作者 闫发旺 张文俊 张荣桂
机构地区 电子十三所
出处 《半导体情报》 2000年第6期25-28,共4页 Semiconductor Information
关键词 量子线场效应管 平面栅场效应管 半导体场效应管 quantum wires quantum-wires field-effective transistors in-plane gate FET MESFET
分类号 TN386 [电子电信—物理电子学]
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参考文献10

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同被引文献48

  • 1李玉增.Ⅲ-Ⅴ族氮化物半导体材料研究概述[J].稀有金属,1997,21(1):52-57. 被引量：5
  • 2[2]Kim H M, Kang T W, Oh J E. Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer[J]. Materials Letters, 2002,46:286-290.
  • 3[3]Porowski S. High pressure growth of GaN-New prospects for blue lasers[J]. Journal of Crystal Growth,1996,166(1/4):583-589.
  • 4[4]Neugebauer J, Van de Walle C G. Dopants and defects in GaN[J].Solid State Communications, 1995,93(5):467-468.
  • 5[5]Grzegory I. High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN-based structures[J].Materials Science and Engineering,2001,82(1/3):30-34.
  • 6[6]Namkoong Gon, Alan Doolittle W, Brown April S,et al. The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films[J].Journal of Crystal Growth,2003,252(1-3).
  • 7[12]Han Wei-qiang, Fan Shou-shan, Li Qun-qing, et al.Synthesis of gallium nitride nanorods through a Carbon nanotube confined reaction[J].Science,1997,277:1 287-1 289.
  • 8[13]Kim T Y, Lee S H, Mo Y H, et al. Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor[J].Journal of Crystal Growth,2003,257(1/2):97-103.
  • 9[14]Peng H Y, Zhou X T, Wang N, et al.Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition[J].Chemical Physics Letters, 2000,327(5/6):263-270.
  • 10[15]Zhang Jun, Zhang Li-de, Jiang Fei-hong,et al.Intensive blue-light emission from semiconductor GaN nanowires sheathed with BN layers[J].Chemical Physics Letters,2004,383(3/4):423-427.

引证文献4

二级引证文献7

半导体情报
2000年 第6期

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