摘要
研究了高能Ａｒ~＋注入对Ｐ＋薄层特性的影响。结果表明，正面高能Ａｒ+注入能在有源区下隐埋一层缺陷带，可有效地净化表面有源区。用高能Ａｒ+／Ｂ+注入制备出了反向漏电流仅１．９ｎＡ／ｃｍ２（－１．４Ｖ）的二极管。
The effect of energetic argon implantation on thin P+ layers properties have been studied. The results show that forward energetic argon implantation can form a immcrsed defects layer which can effectively purify surface active region. By means of energetic Ar+ / B+ implantation, the diedes which have the reverse leakage current density of 1 .9nA/.m2 (at-1 .4V) have been fabricated.
出处
《微电子技术》
2000年第5期45-48,共4页
Microelectronic Technology
