真空环境中多场耦合对Au/Cu/Si薄膜界面结构的影响

Influence of Multi-Field Coupling on Interface Structures of Au/Cu/Si in Vacuum

采用磁控溅射方法在Si基底上制备了Au/Cu薄膜。利用扫描俄歇微探针(SAM)纳米化分析技术进行表面成分分析与深度剖析,研究在真空环境中,紫外辐照、微氧氧含量及处理温度等因素作用对Au/Cu薄膜界面结构的影响。实验结果表明:环境温度的升高,使薄膜内缺陷增加,为Cu原子的扩散提供了更多的扩散通道;紫外辐照产生了等同的热效应,加剧了Cu原子在Au层中的扩散;微氧的存在诱导了Cu原子的扩散。三种因素协同作用下,诱导迁移扩散机制在室温下形成,并于处理温度达到100℃后趋于稳定。

The possible impacts of the space environmental conditions,including the ultraviolet（UV）irradiation,micro-aerobic,and heating-cooling cycle,on the Au/Cu/Si interfaces,were evaluated in experimental ground simulation.The Au/Cu films,deposited on Si substrate by magnetron sputtering,were characterized,before and after the simulation,with X-ray diffraction,scanning electron microscopy,scanning Auger microprobe（SAM）,and atomic force microscopy.The results show that the UV irradiation,heating,and micro-aerobic process strongly affect the Cu diffusion.For example,a temperature rise,mainly because of UV irradiation and/or resistive heating,increased defect density in the films,providing more Cu diffusion paths;and micro-aerobic induced Cu diffusion.We found that an annealing at 100℃ stabilized the Au/Cu/Si interfaces,possibly because of surface desorption of oxygen.