摘要
基于工业碳化硅(SiC)微粉,采用化学改性法将铜负载于SiC原粉表面,使用扫描电子显微镜(SEM)、X-射线粉末衍射仪(XRD)和X-射线光电子能谱(XPS)等表征测试方法,分别考察了pH值、Cu负载量、分散介质等因素对改性实验的影响.结果显示:经高温煅烧后,Cu离子以CuO和Cu2O的氧化态形式负载于SiC表面;不同的分散介质、pH值和Cu离子负载量影响以氧化态形式负载到SiC表面的Cu离子分布.
Copper was loaded on the surface of silicon carbide powder,using the method of chemical plating in order to change the surface of industrial silicon carbide.The surface characteristics of different samples were observed by SEM,XRD and XPS,and then we investigated the influence of pH,different load of Copper and dispersion medium to modified experiments.The results showed that Cu ion loaded on the surface of silicon carbide with the oxidation state form of CuO and Cu2O.The different dispersion medium,pH and the amount of loaded Cu ion influenced the distribution of Cu ion oxidation state form.
出处
《河南大学学报(自然科学版)》
CAS
北大核心
2013年第4期398-401,468,共5页
Journal of Henan University:Natural Science
基金
河南省科技厅科技发展计划项目(092102210262)
河南大学科研基金项目(SBGJ090710)
关键词
碳化硅
负载
铜离子
silicon carbide
load
copper ion