摘要
S掺杂在ZnO材料中引入Zn空位,会对可见光的发光起到增强的作用。利用水热法制备了纤锌矿结构的S掺杂ZnO,随着生长温度的提高,ZnO晶粒的尺寸由1.2μm提高到了2.3μm,样品由低温下各晶粒的均匀生长变为某些晶粒的优先生长模式。在荧光光谱中,紫外和可见发光均得到了增强,且可见光发光的增强要明显大于紫外发光,这表明生长温度的提高会改善晶体的质量,同时S的存在也将会使样品中的Zn空位迅速增多。S掺杂ZnO导致的可见光发光的增强可以使ZnO材料在可见光发光器件中得进一步到的应用。
The doping of sulfur can introduce Zn vacancies into ZnO material, which will enhance visible emission. We prepared S-doped ZnO wurtzite structures with hydrothermal method. The size of ZnO crystals increases from 1.2 μm to 2.3 μm with the increase of resultant temperature. Crystal growth of ZnO changes from uniform growth at lower temperature to preferential growth of some crystals at higher temperature. Ultra-violet and visible emissions are all enhanced, but the enhancement of visible emission is significantly greater than that of ultra-violet emission. This demonstrates that the increase of growth temperature will improve the quality of crystals. The existence of sulfur will soon increase Zn vacancies. The result shows a potential application of ZnO material in a visible emission device.
出处
《山东科学》
CAS
2013年第4期37-41,共5页
Shandong Science
基金
山东省教育厅科技研究计划项目(J11LG86)
关键词
ZNO
水热法
生长机理
光学特性
ZnO
hydrothermal method
growth mechanism
optical property
