不同工作温度下a-Si(n)/c-Si(p)/uc-Si(p+)异质结太阳能电池微晶硅背场的模拟计算与优化

Back-surface Field Simulation and Optimization of a-Si(n)/c-Si(p)/uc-Si(p+) Heterojunction Solar Cells at Different Working Temperatures

采用Afors-het太阳能电池异质结模拟软件,模拟了在不同工作温度下微晶硅背场对a-Si(n)/c-Si(p)异质结太阳能电池性能的影响。结果表明,随着背场带隙的增加,开路电压和转化效率都增大。随着背场掺杂浓度的增加,开路电压、填充因子和转化效率都在不断地增加;随着背场厚度的增加,电池性能有所下降。随着电池工作温度的上升,微晶硅背场所对应的最佳浓度掺杂值和最佳厚度值变化不大。但是随着温度的上升,微晶硅背场所对应的最佳带隙值有明显的右移趋势。实验结果为电池的商业化生产提供了实验参数。

The influence of back surface field of microcrystalUne silicon on the a-Si（n）/c-Si（p）/uc-Si（p＋） heterojunction solar cell is simulated with the afors-het software at different operation temperatures.The results show that the open circuit voltage and conversion efficiency increase with the increasing of the band gap of microcrystalUne silicon.The open circuit voltage,fill factor and conversion efficiency increase with the increasing of the doped concentration.The cell performance declines when the microcrystalline silicon become thicker.The corresponding best values of doping concentration and thickness change a little when the operation temperature of the cell rises.However,the corresponding best value of band gap tends to move right obviously when the operation temperature of the microcrystalline silicon back surface field increases.The experimental results provide the experimental parameters for the commercial production of solar cells.