电泳沉积法制备纳米CdSe均匀膜

Nano-CdSe Homogeneous Films Prepared by Electrophoretic Deposition Method

采用电泳沉积技术，在预处理好的片上交替沉积表面带正负电荷的CdSe薄膜，扫描电子显微镜、原子力显微镜和紫外一可见光谱的表征分析表明，薄膜中粒子排布紧密平整、粒径大小均匀、颗粒粒径在60-100nm范围，构成的type—II型半导体材料发生电子空穴分离，量子点的荧光发射强度减小。

The ultra-thin films of CdSe quantum dots were fabricated by electrophoretie deposition technique, and the properties of the films were investigated by UV-visible spectrum instrument, SEM and AFM. The results indicate that the films form a type-II conductive material with particle size from 60 to 100 nm,and have smooth and close flat,which would reduce the fluorescence emission intensity.