摘要
从热力学角度建立了MoSi2 氧化相的低温化学稳定性图 ,并对实验现象进行了分析。建立的MoSi2 氧化相的低温化学稳定性图阐明了MoSi2 材料低温氧化生成物与温度、氧分压之间的关系 ;可较好地解释实验现象和结果 ;并指出减少MoSi2 材料的内部缺陷 ,使扩散至界面的氧分压维持较低数值 ,可避免生成挥发性MoO3相 ,从而防止材料的“PEST”现象。
The chemical stability graph of oxide of MoSi 2 at low temperature was found on thermodynamics.The phenomenon in experiment was analyzed according to the graph. Results show that the graph elucidated the relation among the oxides,temperature and oxygen pressure after MoSi 2 oxidized at low temperature. So the chemical stability graph can be used to qualitatively explain phenomenon and consequence of the experiment.If the pressure of oxygen diffusing to interface is kept in low value by reducing the defect in MoSi 2,PEST can be prevented for avoiding volatile MoO 3.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2000年第6期423-426,共4页
Chinese Journal of Rare Metals
基金
煤炭部优秀青年基金!资助 (项目编号 :97 0 73)
