化学镀铜Si基底上碳纳米管薄膜强流脉冲发射稳定性研究

Research on Intense Pulsed Emission Stability of Carbon Nanotube Films Grown on Si with Electroless Plated Cu Layer

为了研究碳纳米管薄膜在强流连续多脉冲下的发射特性,采用酞菁铁高温热解方法在化学镀铜硅基底上生长了碳纳米管薄膜(Si/Cu-CNTs),作为强流脉冲发射阵列。在20GW脉冲功率源系统中采用二极结构对Si/Cu-CNTs薄膜进行连续多脉冲高电流发射测试,结果表明:连续多脉冲情况下,峰值电场达到29.1V/μm,发射电流密度为0.892kA/cm2时,Si/Cu-CNTs薄膜仍具有良好的发射可重复性,连续发射的每个电流波形基本一致,发射稳定性好。

In order to study intense pulsed emission characteristics of carbon nanotube films （CNTs）, Si/Cu-CNTs were synthesized on Si with electroless plated Cu layer by pyrolysis of iron phthalocyanine （FePc）,and for use of intense pulsed emission array. Continuous multi-pulses e- missions were measured with diode structure in a 20 GW pulse power system. It is found that, in continuous pulse mode, Si/Cu-CNTs presented good repeatability of pulsed emission at the ap- plied peak electric field of-29.1 V/μm and the emission current density of-0. 892 kA/cm2 ,and each emission current wave was almostly uniform with others,indicating their good emission sta- bility.