具有渐变式折射率分布布拉格反射层的发光二极管

Light-emitting Diodes with Graded Refractive Index Distributed Bragg Reflectors

对具有渐变式折射率分布布拉格反射层(GRIN-DBR)的发光二极管进行了研究。研究发现,在传统分布布拉格反射层(C-DBR)的AlAs/Al0.45Ga0.55As的界面处插入5nm厚的折射率渐变层,可以使DBR的反射带宽从82nm增加到103nm。在20mA注入电流下,具有GRIN-DBR的发光二极管与具有C-DBR的发光二极管的正向电压没有明显区别,而其光通量比具有C-DBR的发光二极管高8%。

Light-emitting diodes （LEDs Bragg reflectors （DBRs） are investigated. It nm to 103 nm by inserting a 5 nm-thick ） is with graded refractive index （GRIN） distributed found that the stop bandwidth is increased from 82 GRIN layer at the interface between AIAs and A10.45Ga0.55As of conventional DBRs （C-DBRs）. Under 20 mA injection current, there is no obvi- ous difference for the forward voltages of the LEDs with GRIN-DBRs and the LEDs with C- DBRs. Furthermore, the luminous flux of the LEDs with GRIN-DBRs is 8% higher.