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CrPtMn顶钉扎自旋阀材料的交换耦合作用研究 被引量:1

Exchange Coupling in CrPtMn-based Top-pinning Spin Valves
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摘要 反铁磁钉扎层和铁磁被钉扎层之间的交换耦合作用是高性能自旋阀材料研究中的一个关键因素。本工作研究了CrPtMn顶钉扎自旋阀材料中的交换耦合场(Hex)与薄膜沉积条件以及退火处理之间的关系。研究表明:沉积后的自旋阀材料中的Hex大小与CrPtMn钉扎层的溅射工作气压关系不大,Hex约为7.96×103A/m。然而,经过240℃退火2 h处理后,Hex呈现出与CrPtMn沉积时的溅射工作气压相关的特性,随着溅射工作气压的增加而增大。材料退火后的交换耦合场Hex的温度特性良好,室温下约为2.39×104A/m。Hex随着测试温度的升高而逐渐减小,交换耦合场消失时的失效温度(blocking temperature)为315℃。 The exchange coupling effect between the ferromagnetic pinned layer and antiferromagnetic pinning layer is considered to be one of the key factors for fabricating high performance spin-valves. In this study, the dependence of the exchange coupling field (Hex) in CrPtMn-based spin valves on the deposition pressure and subsequent anneal treatment has been investigated. It is found that the Hex for the as-deposited spin valves changes little by varying the sputtering pressure during the deposition of the CrPtMn pinning layer, and the Hex value is roughly 7.96 × 10^3 A/re. However, after the as-deposited spin valves are annealed at 240 ℃ for 2 h, the Hex correlates and increases with an in- crease of the sputtering pressure during the CrPtMn deposition. The exchange coupling Hex for annealed spirt valves shows good thermal stability with a strength of 2.39 × 10^4 A/m at room temperature. The Hex gradually decreases with increasing temperature, and finally disappears at 315 ℃ which is its blocking temperature.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2013年第9期977-981,共5页 Journal of Inorganic Materials
基金 浙江省重大科技专项(2011C11047) 浙江省"磁电子材料和器件"高校创新团队(2009[171]) 浙江省重点科技创新团队(2010R50010) 科技部973项目(2011CBA00602)~~
关键词 交换耦合作用 自旋阀 沉积气压 测试温度 exchange coupling spin valve deposition pressure measurement temperature
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  • 1刘鹏,李伟,刘华瑞,叶双莉,任天令,刘理天.低矫顽力GMR磁传感器的自旋阀结构研究[J].传感技术学报,2006,19(05B):2061-2064. 被引量:4
  • 2[1]Baibich M N, Broto J M, Fert A, Nguyen Van Dau F, Petroff F, Etienne P, Creuzt G, Friederich A, Chazelas J. Giant Magnetoresistance of (001) Fe/(001) Cr Magnetic Superlattices. Phys. Rev. Lett. 1998, 61:2472~2475.
  • 3[2]Giebeler C, Adelerhof D J, Kuiper A E T, Van Zon J B A, Oelgeschlager D, Schulz G. Robust GMR sensors for angle detection and rotation speed sensing. Sens. Actuators, 2001, A 91:16~20.
  • 4[3]Childress J R, Carey M J, Wilson R J, Smith N, Tsang C, Ho M K, Carey K, MacDonald S A, Ingall L M, Gurney B A. IrMn spin-valves for high density recording. IEEE Trans. Magn, 2001, 37:1745~1748.
  • 5Parkin S S. Dramatic Enhancement of interlayer exchange coupling and giant magnetoresistance in Ni81Fe19/Cu multilayers by addition of thin Co interface layers [J]. Appl Phys Lett, 1992, 61: 1358-1360.
  • 6Parkin S S. Origin of enhanced magnetoresistance of magnetic multilayers: spin-dependent scattering from magnetic interface states [J]. Phys Rev Lett, 1993, 71: 1641-1644.
  • 7Speriousu V S, Nozieres J P, Gurney B. Role of interracial mixing in giant magnetoresistance [J]. Phys Rev B,1993, 47:11579-11582.
  • 8Gureny B A, Speriousu V S, Nozieres J P, et al. Direct measurement of spin-dependent conduction-electron mean free paths in ferromagnetic metals [J]. Phys Rev Lett, 1993, 71:4023-426.
  • 9Yan S, Du J, Weston J L, et al. Modulated magnetic properties of hard/soft exchange-coupled SmFe/NiFe multilayers [J]. J Magn Magn Mater, 2001, 231:241-245.
  • 10Baibich M N, Broto J M, Fert A, et al. Giant magneto- resistance of(001)Fe/Cr magnetic superlattices [J]. Phys Rev Lett,1988, 61(21): 2472-2475.

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  • 1Baibich M N,Broto J M,Fert A,et al.Giant Magneoresistance of ( OO1 ) Fee/( OO1 ) Cr Magnetic Superlattices [J]. Phys. Rev. Lett,1998,61(21) :2 472-2 475.
  • 2Binasch G,Grtinberg P,Saurenbach F,et a/.Enhanced Magne toresistance in Layered Magnetic Structures with Antiferro- magnetic Interlayer Exchange[J]. Phys. Rev. B, 1988,39 ( 7 ) : 4 828-4 830.
  • 3Han G C,Wang C C,Qiu J J,et a/.Interlayer Couplings in a Differential Dual Spin Valve [J]. App. Phys. Lett, 2011: 192 502.
  • 4Chen Y T, Hsieh W H.Thermal, Magnetic, Electric,and Ad hesive Properties of Amorphous Co60 Fez0 B20 Thin Films[J] Journal of Alloys and Compounds, 2013,552: 283-288.
  • 5Shen W, Mazumdar D, Zou X. Effect of Film Roughness in MgO-hased Magnetic Tunnel J unctions[ J ]. App. Phys. Lett, 2006,88,182 508.
  • 6Jose Garcia-Torres, ElisaVall6s, Elvira G6mez. Temperature Dependence of GMR and Effect of Annealing on Electrode- posited Co-Ag Granular Films[J].Journal of Magnetism and Magnetic Materials,2010,322:3 186-3 191.
  • 7Chen K C,Wu Y H,Wu K M,et al.E{fect o[ Annealing Tem- perature on Exchange Coupling in NiFe/FeMn and FeMn/Ni Fe Systems[J].J.Appl.Phys, 2007,101 : 09E516.
  • 8Lee J H,Jeong H D,Yoon C S,et al.Interdiffusion in Antifer- romagnetic/ferromagnetic Exchange Coupled NiFe/IrMn/ CoFe Muhilayer[J].J.Appl.Phys,2002,91 : 1 431 1 435.
  • 9陈长琦,穆怀普,刘腾飞,裘一冰.旋转圆柱靶磁控溅射阴极的磁场模拟及结构设计[J].真空科学与技术学报,2012,32(10):913-918. 被引量:15
  • 10李健平,钱正洪,孙宇澄,白茹,刘建林,朱建国.具有SAF结构的IrMn基自旋阀材料的磁场退火研究[J].无机材料学报,2014,29(4):411-416. 被引量:1

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