CMOS器件p、γ、β辐照损伤等效剂量分析计算

Theoretical Analysis and Computer Calculation of the Equivalent Dose of p,γ,β Irradiation Damages on CMOS Electronic Device

建立了CMOS电子元器件中质子、电子和光子辐照损伤 (电子 空穴对和离位原子浓度 )计算模型。利用微机化的电子 光子簇射过程模拟程序EGS4和TRIM程序分别计算了电子 ( β)、光子 (γ)和质子 ( p)辐照在CMOS器件各层中产生的电子 空穴对和离位原子浓度。计算结果表明 ,在CMOS器件桥结绝缘层中 ,电子产生的电子 空穴对和离位原子浓度最高 ,光子次之 ,质子最低 ,这表明电子辐照损伤最高 ,光子次之 ,质子最小。

The physical model of p(proton),γ,β irradiation damages (including the concentrations of electron hole pair and displaced atom) on CMOS electronic device has been established. The concentrations of electron hole pair and displaced atom produced by p,γ and β irradiations in the various layers of CMOS electronic device have been calculated by EGS4 and TRIM programs,respectively. The calculation results show that in the bridge insulator layer of the CMOS device, the concentrations of electron hole pair and displaced atom produced by β irradiation are higher than that produced by γ irradiation, and the lowest by p irradiation. This indicates that the β irradiation damage on CMOS device is the most serious for the three kinds of particles, the γ irradiation damage is the second, and the proton irradiation damage is the smallest.