静态随机存取存储器质子单粒子效应实验研究

Experimental study on proton single event effects in static random access memories

描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。采用金箔散射法可以降低加速器质子束流五六个量级 ,从而满足半导体器件质子单粒子效应的要求。研制的弱流质子束流测量系统和建立的注量均匀性测量方法解决了质子注量的准确测量问题。提高了存储器单粒子效应长线测量系统的性能 ,保证了翻转数的准确测量。实验测得静态随机存取存储器质子单粒子翻转截面为 1 0 - 1 4 cm2 / bit量级 ,随质子能量的增大略有增大。

Expermental methods were emphatically described for measuring the proton Single Event Upset (SEU) cross section in Static Random Access Memories (SRAMs). The proton beam from accelerator was scattered and reduced by 5～6 order of magnitude with an Au foil to suit the proton SEU experiment on semiconductor devices. A system was designed for measuring the very low proton beam and a method was found for accurate measurement of uniformity of the proton flux. The performance of the system for remote measuring SEU in memories was improved in order to measure upsets accurately. The SEU cross section, for SRAMs under proton irradiation is of the order of 10 -14 cm 2/bit, rising with the increase of the proton energy. Hard error in single bit and functional error were observed in experiment and explained reasonably.