离子注入SOI薄膜材料的制备及性能

Formation Of SOI films by ion implantation into Si and their properties

ＳＯＩ－ＣＭＯＳ电路具有高速度、低功耗、抗辐照等优点。用氧、氮离子注入硅中，得到性能良好的ＳＩＭＯＸ和ＳＩＭＮＩ薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了 ＳＯＩ材料表面界面的电学性能。并对各种方法进行了讨论。结果显示；用分步注入和分步退火制备的ＳＯＩ材料大大地改善了材料的电学性能。

The SOI (silicon-on-insulator) technology was regarded as a very important technique of the silicon-integrated circuit in the 21 century. The SIMOX (separation by implanted oxygen) and SIMNI (separation by implanted nitrogen) films were formed by O+ or N+ ion implantation into silicon with several methods. The SR (spreading resistance), Hall effects and DLTS (deep-level transient spectroscopy) measurements were used to analyse the surface electrical properties of the SOI structures. The results show that the step-implanted SOI films have good electrical properties.