基于Cu_xSi_yO阻变材料的RRAM抗总剂量辐照性能

Radiation Tolerance against TID Effect of Cu_xSi_yO-based RRAM

研究了基于CuxSiyO结构的阻变式随机存储器(RRAM)的抗总剂量辐照能力.存储器芯片置于钴源辐照室内,通过60 Co释放出的γ射线模拟空间辐照环境.在辐照总剂量达到3 000Gy的条件下,单元仍然可以保持原有的存储信息,高低阻态的阻值、写电压、良率等性能几乎没有任何衰减.良好的辐照特性使得RRAM有望在抗辐射领域中得到广泛应用.

Radiation tolerance against TID effect has been investigated on the CuxSiyO-based resistive random access memory（RRAM）.Cobalt-60 γ ray is used to simulate the space radiation environment.The stored information could remain when total dose is cumulated as high as 3000 Gy.Little degradation is shown for cell resistance,write voltage and yield.The good radiation characteristic makes the device promising for the application in radiation harsh environments.