期刊文献+

具有低功耗和多值存储性能的双层WO_X/AlON阻变存储器的研究

A WO_X/AlON Dual-layer Resistive RAM with Low Power and Multi-level Storage Characteristic
原文传递
导出
摘要 针对当前阻变存储器(RRAM)面临的功耗和高密度存储的问题,介绍了一种降低功耗和形成多值存储能力的器件结构.相比单层结构的AlON RRAM,双层结构的WOX/AlON RRAM具有低至10μA的复位(reset)电流,1 000次以上的转换特性(endurance),较低的操作电压,以及多值存储等性能.针对WOX/AlONRRAM,提出了WOX介质层的等效电路模型为固定电阻与二极管串联模型.在直流置位(DC set)过程中,电路中存在一个较大的过冲电流,使得无法通过控制限流来获得不同大小的低阻态.在增加WOX介质层后,在WOX层和AlON层间形成了界面肖特基势垒,因此有效地抵抗了过冲电流,提高了低阻态的可控性. A low power and multilevel resistive switching memory device was proposed to solve the power consumption and high density storage problem.Compared with the AlON single-layer,the AlON/WOX bilayer structure displayed better performances,such as: lower reset current of 10μA,better endurance of 1000 cycles,lower operation voltage,and multilevle storage ability.An equivalent circuit model including a constant resistance in series with a diode was proposed for the WOX/AlON RRAM.During the set process,a large overshoot current flowed through the AlON single layer device,thus the compliance current failed to control the resistance.However,in the AlON/WOX bilayer device,there is a Schottky barrier formed in the WOX interface,which can effectively restrain the overshoot current.Therefore,the LRS can be controlled successfully,and multilevel storage was realized.
出处 《复旦学报(自然科学版)》 CAS CSCD 北大核心 2013年第3期309-313,共5页 Journal of Fudan University:Natural Science
基金 国家"863"高技术研究发展计划资助项目(2008AA031401 2011AA010404) 上海市自然科学基金重点项目(12XD1400800) 国家自然科学基金资助项目(2011ZX02502)
关键词 WOx ALON WOx/AlON reset电流 多值存储 WOX AlON WOX/AlON reset current multi-level storage
  • 相关文献

参考文献15

  • 1Hutchby J, Garner M. Assessment o{ the potential and maturity of selected emerging research memory technologies [C] //Workshop ~ ERD/ERM Working Group Meeting, ITRS, 2010:6 7.
  • 2Lin M H, Wu M C, Huang C Y, et al. High-speed and localized resistive switching characteristics o{double-layer SrZrOa memory devices [J]. Journal of Physics D: Applied Physics, 2010, 43(29).- 295404.
  • 3Lee J, Bourim. E, Lee. W, et al. Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications [J]. Applied Physics Letters, 2010, 97(17): 172105.
  • 4Yoon J, Lee J, Choi H, et al. Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications[J].Microelectronic Engineering, 2009, 86 ( 7 ) : 1929-1932.
  • 5宋雅丽.基于标准铜互连和铝互连体系阻变存储器关键技术研究[D].上海:复旦大学,2011.
  • 6Kim W, Park S, Zhang Z P, et al. Forming-free nitrogen-doped A1Ox RRAM with sub-t~A programming current [C]//Symposium on VLSI Technology. Kyoto, Japan: Proc VLSIT, 2011= 22-23.
  • 7Li J, Zhang X W, Zhang L, et al. Performance enhancement of organic thin-film transistors using WOa- modified drain/source electrodes [J]. Semiconductor Science and Technology, 2009, 24(11) : 115012.
  • 8Yeo Y C, King T J, Hu C M. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology [J]. Journal of Applied Physics, 2002, 92 (12) : 7266-7271.
  • 9Tang Y B, Cong H T, Chen Z G, et al. An array of eiffel-tower-shape AIN nanotips and its field emission properties [J]. Applied Physics Letters, 2005, 86(23) : 233104.
  • 10Yoon J, Choi H, Lee D, et al. Excellent switching uniformity of Cu-doped MoOx/GdOx bilayer for nonvolatile memory applications [J]. IEEE Electron Device Letters, 2009, 30(5) : 457-459.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部