抗灰迹Rb∶KTP晶体的生长及性能研究

Growth and Properties Research of Gray-track Resistance Rb∶KTP Crystal

本文采用K6P4O13(K6)作助熔剂来生长Rb∶KTP晶体,所生长的晶体具有电导率低,吸收系数稳定和好的抗灰迹性能等优点。本文按照生长比例KTP∶K6=1.345∶1(物质的量比),Rb离子浓度为取代溶液中K离子浓度的1.4 mol%左右来进行配料。测量了Rb∶KTP晶体中掺杂的Rb离子浓度为0.87 mol%,经过测试,晶体的电导率达到10-10S/cm。测试了晶体随时间延长的光能吸收,发现Rb∶KTP晶体的吸收系数比较稳定,并进行了晶体抗灰迹性能激光测试,发现Rb∶KTP晶体较普通KTP晶体具有很好的抗灰迹性能。

Rb： KTP crystal was grown from a flux of K6P4O13 （K6） by the TSSG method. Which has Low conductivity and Gray-track resistance properties compared with ordinary KTP crystal. A sample taken from medium of crystal was used to measure the concentrations of Rb ＋ in Rb： KTP crystal. The concentration of Rb ions in Rb： KTP crystal was measured to be 0.87mol% by ICP-AES method. The conductivity of Rb： KTP Crystal was measured to be 10^10 S/cm. The research of absorption and Gray-track resistance properties under laser Indicate that Rb： KTP crystal has well Gray-track resistance properties.