摘要
由光热调制半导体激光器物理模型出发 ,从理论上推导出半导体激光器结温变化与相关物理量的关系式 ,并从光热调制实验中得出光强调制同调制频率及半导体激光器偏置电流的关系 ,为选择半导体激光器恰当的光热调制参数 ,以降低光强调制干扰 ,从而实现纳米精度干涉测量提供重要依据。
Based on the physical model of a laser diode (LD) modulated utilizing photothermal effect, the relations of the photothermal intensity modulation depth of the LD with the modulation frequency and injection current are theoretically and verify experimentally deduced. It is useful for determining appropriate modulation frequency and injection current in LD interferometer with a photothermal modulation to reduce the influence of light intensity modulation and realize nanometer accuracy interferometer measurement.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2000年第11期969-972,共4页
Chinese Journal of Lasers
基金
国家自然科学基金(69978024)
上海市应用材料研究与发展基金资助项目
关键词
光热调制
半导体激光器
干涉测量
光强调制
photothermal
laser diode
interferometer
intensity modulation
thermal time const
