摘要
We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.
We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.
基金
supported by the Key Program of the National Natural Science Foundation of China(Nos.61176050,61036003,61176092, 60837001
the Fundamental Research Funds for Fujian Province of China(No.2012H0038)
the National Basic Research Program of China (Nos.2012CB933503,2013CB632103)
the Fundamental Research Funds for the Central Universities,China(No.2010121056)
