摘要
A type of SOI based MMI 3dB splitter has been demonstrated. The geometry was analyzed and designed by effective index method and guide mode method. The fabrication tolerance was analyzed too. The device was fabricated and near field output was obtained. The device shows large width tolerance, low loss and low power uniformity.
A type of SOI based MMI 3dB splitter has been demonstrated. The geometry was analyzed and designed by effective index method and guide mode method. The fabrication tolerance was analyzed too. The device was fabricated and near field output was obtained. The device shows large width tolerance, low loss and low power uniformity.
基金
Project Supported by National Natural Science Foundation of China Under Grant No.698962 60 and69990 540 .
