摘要
在 Ga As表面淀积β- Ga S是一种可行的 Ga As表面钝化方法 .用光电子能谱研究了超薄Ga S淀积后的 Ga As表面 ,分析了表面成分 .并发现 Ga S的淀积能使 Ga As原有的表面能带弯曲减小 0 .4e V,这意味着表面费米能级钉扎在一定程度上得到消除 .给出了一个半定量的理论模型 ,来解释 Ga
Deposition of β GaS on GaAs(100) wafers has been previously found to be effective on the passivation of the GaAs surfaces.Photoelectron spectroscopy is used to investigate the chemical environment of the GaAs surfaces passivated by GaS.Upon the deposition of GaS,the band bending of the GaAs surface is found to be reduced by 0 4eV.It means that Fermi level pinning of the GaAs surface can be eliminated to a certain extent.A quasi\|quantitative theoretical model is proposed to explain the difference between the reduction in band bending after the deposition of GaS on GaAs and the increase of band bending caused by wet chemical treatment.
