摘要
在维持电路参数同比变化和通过半导体断路开关(SOS)的电流密度不变的基础上,提出了一种SOS截断特性模拟的缩比模型,并可在Silvaco ATLAS软件中应用。在以不同的缩比率选取等效SOS横截面积的情况下,将原电路中串联的100个二极管等效为若干个二极管,模拟得到了相同的二极管电流和电压波形。模拟结果表明,该模型不仅可以得到正确的SOS瞬态截断过程,而且可将计算速度提高近百倍。通过对SOS截断过程中载流子分布和电场分布变化过程的分析发现,SOS的截断过程发生在n-n+区。
A scaled model is presented to simulate the opening process of semiconductor opening switches（SOSs）,which can be used in Silvaco ATALAS code.The model scales all external circuit components with the same proportion and keeps physics in SOSs well.Using various equivalent SOSs with different scales of cross section to represent the original 100 SOSs in series,the simulations get the same output pulses for each diode in all cases.It is verified that the model can not only simulate the opening process of the SOS correctly,but also speed up the computation by almost one hundred times.From the evolution of carrier density distribution and electric field distribution,it can be found that the opening process starts in the n-n＋ area.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2013年第9期2341-2345,共5页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(51277147)
关键词
半导体断路开关
缩比模型
截断过程
semiconductor opening switch
scaled model
opening process
