改良西门子法多晶硅产品质量分析

Quality Analysis of Polycrystalline Silicon Produced by Modified Siemens Process

以工业硅为原料采用改良西门子法生产出质量优良的多晶硅,分别采用ICP-MS、低温傅立叶变换红外光谱、硅多晶气氛区熔基P检验法和真空区熔基B检验法等,对三氯氢硅中的杂质和多晶硅产物中的P、B、C、O含量及其P、B电阻率进行了检测,报道了改良西门子法获得的优质多晶硅产品质量检测数据;对影响多晶硅产物质量的各种因素,包括原料混合气进料量变化,还原炉内生长温度,生长过程中AEG电气的电压、电流变化,以及中间产品精制三氯氢硅、氢气的质量等进行了分析讨论。研究结果对于稳定生长高质量多晶硅具有重要参考价值。

Polycrystalline silicon with good quality was produced using silicon metal as raw material by modified Siemens process. The impurity contents of the purified trichlorosilane, the P, B, C, O contents of polycrystalline silicon and the resistivity of P, B were analyzed by ICP-MS, low-temperature Fourier transform infrared spectroscopy, polycrystalline silicon atmosphere zone melting base-phosphorus and silicon-polycrystalline vacuum zone melting base-boron testing method, respectively. The testing results of product quality of polycrystalline silicon produced by modified Siemens process were reported, which show that the obtained polycrystalline silicon is of high quality. Various factors influencing the product quality of polycrystalline silicon have been discussed, including the changing curves of the temperature, feeding speed about the gas mixtures and the electrical voltage and current of AEG during the whole growing process in the reduction furnace. The quality of the intermediates, such as purified trichlorosilane and hydrogen, used for producing polycrystalline silicon was also analyzed. The results have laid a reliable foundation for steadily producing high-quality polycrystalline silicon.