模拟分析发射层带隙及缺陷态对HIT太阳电池性能的影响

Influence of Band Gap and Defect State of Emitter Layer on the Performance of HIT Solar Cell by Simulation and Analysis

运用美国滨州大学研发的AMPS-1D程序,模拟计算了发射层对n型衬底上有背场的非晶硅/单晶硅异质结太阳电池光伏性能的影响。结果表明当发射层隙间缺陷态密度大于发射层掺杂浓度并达到一定值时,太阳电池的开路电压和填充因子将大幅度降低,从而导致电池的转换效率迅速衰减。发射层的带隙越大,电池的短路电流越大,而带尾宽度越宽,电池的开路电压越低,二者应达到最佳的匹配值才能使太阳电池达到更高的转换效率。

The effect of emitter layer on the photovoltaic characteristics of a-Si/c-Si heterojunction solar cell with back surface field on n-type substrate was simulated by AMPS-1 D program developed by the Pennsylvania State University. The results indicated that when the gap defect state density of emitter layer is greater than the doping concentration of emitter layer and reaches a certain value, the open-circuit voltage and fill factor of the solar cell will be greatly reduced, resulting in the conversion efficiency of the solar cell quickly decayed. The band gap of the emitter layer is bigger, the short current is larger, and the band tail width is wider, the open-circuit voltage is lower, so the band gap and the band tail width should match to the best value to make solar cells achieve higher conversion efficiency.