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16~22nm极紫外光刻物镜工程化设计 被引量:14

Manufacturable Design of 16~22nm Extreme Ultraviolet Lithographic Objective
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摘要 极紫外光刻是16~22nm光刻技术节点的候选技术之一,其投影物镜设计需在满足像质和分辨率要求的前提下,兼顾工程可实现性。在考虑加工、检测和制造约束的情况下,设计了像方数值孔径分别为0.3和0.32、曝光视场为26mm×1.5mm的极紫外光刻投影物镜。详细分析和比较了两套物镜的光学性能和可制造性。结果表明,两套物镜结合分辨率增强技术可分别满足22nm和16nm光刻技术节点的性能要求。 Extreme ultraviolet lithography is one of the promising technologies for 16~22 nm node of lithography. Design of the extreme ultraviolet lithographic projection objective needs not only to meet the demand of imaging quality and resolution but also to consider the manufacturability. Two projection objectives with numerical apertures of 0.3 and 0. 32, respectively, are designed in the 26 mm × 1. 5 mm exposure area to meet the demands of manufacture, measurement and fabrication. The optical performance and manufacturability of the two projection objectives are analyzed and compared in detail. Combining with the resolution enhancement technology, the two projection objectives can meet the requirements of 22 nm and 16 nm node of lithography.
出处 《光学学报》 EI CAS CSCD 北大核心 2013年第9期249-256,共8页 Acta Optica Sinica
基金 国家科技重大专项(2012ZX02702001-002)
关键词 光学设计 投影物镜 反射系统 极紫外光刻 optical design projection objective catoptric system extreme ultraviolet lithography
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  • 1JIN Chun shui, MA Yue ying, PEI Shu,CAO Jian lin (Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022, China).Development of an Experimental EUVL System[J].光学精密工程,2001,9(5):418-423. 被引量:2
  • 2Kazuya Ota, Iwao Nishiyama, Taro Ogawa, Ei Yano, Shinji Okazaki (ASET EUV Laboratory, Atsugi-Shi, Kanagawa 243-0198,.Current Status of Extreme Ultraviolet Lithography in Japan[J].光学精密工程,2001,9(5):424-429. 被引量:2
  • 3李艳秋.50nm分辨力极端紫外光刻物镜光学性能研究[J].光学学报,2004,24(7):865-868. 被引量:15
  • 4Scott A.Lerner,Jose M.Sasian,Michael R.Descour.Design approach and comparison of projection cameras for EUV lithography[J,].Opt.Eng.,2000,39(3):792-802.
  • 5Matthieu F.Bal,Florian Bociort,Joseph J.M.Braat.Analysis search and classification for reflective ring field projection systems[J].Appl.Opt.,2003,42(13):2301-2311.
  • 6Florian Bociort,Oana Marinescu.Designing lithographic objectives by constructing saddle points[C].SPIE,2006,6324,TuA3.
  • 7Hudyma,Russell M..Reflective optical imaging systems with balanced distortion[P].US Patent,2001,6226346.
  • 8Mann, H. U. R, W. Ulrich. Reflective high-NA projection lenses [C]. SPIE, 2005, 5962:332-339.
  • 9T. Peschel, H. Banse, C. Damm. Mounting an EUV schwarzschild microscope lens[C]. SPIE, 2005, 5962:430-437.
  • 10H. Meiling, N. Buzing, K. Cummings. EUVL system: moving towards production [C]. SPIE, 2009, 7271:727102.

共引文献54

同被引文献137

  • 1李艳秋.50nm分辨力极端紫外光刻物镜光学性能研究[J].光学学报,2004,24(7):865-868. 被引量:15
  • 2孙雅洲,梁迎春,董申.微小型化机床的研制[J].哈尔滨工业大学学报,2005,37(5):591-593. 被引量:24
  • 3徐永祥,陈磊,朱日宏,李新华.微小球面曲率半径的测量研究[J].仪器仪表学报,2006,27(9):1159-1162. 被引量:23
  • 4H Meiling, W de Boeij, F Bornebroek, et al..From performance validation to volume introduction of ASML′s NXE platform [C].SPIE, 2012, 8322: 83221G.
  • 5M Lowisch, P Kuerz, O Conradi, et al..Optics for ASML′s NXE:3300B platform [C].SPIE, 2013, 8679: 86791H.
  • 6M Goldstein, R Hudyma, P Naulleau, et al..Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography [J].Opt Lett, 2008, 33(24): 2995.
  • 7H Glatzel, D Ashworth, M Bremer, et al..Projection optics for extreme ultraviolet lithography (EUVL) micro-field exposure tools (METs) with a numerical aperture of 0.5 [C].SPIE, 2013, 8679: 867917.
  • 8E Tejnil, K A Goldberg, J Bokor.Phase effects owing to multilayer coatings in a two-mirror extreme-ultraviolet schwarzschild objective [J].Appl Opt, 1998, 37(34): 8021-8029.
  • 9C Liang, M R Descour, J M Sasian, et al..Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics [J].Appl Opt, 2001, 40(1): 129-135.
  • 10S Edlou, L Sun, C Synborski.Coating induced phase aberration in a Schwarzschild objective [C].SPIE, 2008, 7067: 706709.

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