硅氧化物反应离子刻蚀均匀性研究(英文)

ON THE UNIFORMITY OF REACTIVE ION ETCHING OF SILICON OXIDE

提出了提高径向刻蚀均匀性的一种新颖的方法。在反应离子刻蚀系统中,采用等离子体控制环调节硅氧化物的径向刻蚀速率,刻蚀均匀性在等效于直径为15 cm 硅片上可以达到±3%.

A novel method for improving the radial etch uniformity is presented.The technique in-volves adjusting the radial etch rate of silicon oxide in a reactive ion etching system.The etch uniformityover an area equivalent to having a 15 cm diameter silicon wafer,is found to be within ±3%.