摘要
提出了一种新的非均匀减薄法,即选择阳极氧化法。用于n^+-n-n^(++)GaAs高低结雪崩二极管的n^+层厚度的控制,使器件的效率达到理论值。
A new technique called selective anodic oxidation, by which the ununiform epilayers can be thinned, is presented. The thickness of n+-layers of GaAs IMPATT diodes with n+-n-n++ structure has been strictly controlled by the use of this technique. This results in the efficiency of IMPATT diodes up to its theoretical value.
关键词
半导体工艺
减薄法
阳极氧化
Semiconductor technology
Thinning technique
Selective anodic xidation
