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Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer 被引量：1

Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer
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摘要 We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors （HBT）, in a cascode configuration. A new HBT with modified physical structure is proposed and simulated to improve the frequency characteristics of a cascode mixer. For the verification and calibrating software simulator, we compare the simulation results of a typical HBT, before modifying it and com paring it with empirical reported experiments. Then we examine the simulator on our modified proposed HBT to prove its wider frequency characteristics with better flatness and acceptable down conversion gain. Although the idea is examined in several GHz modulation, it may easily be extended to state of the art HBT cascode mixers in much higher frequency range. We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors （HBT）, in a cascode configuration. A new HBT with modified physical structure is proposed and simulated to improve the frequency characteristics of a cascode mixer. For the verification and calibrating software simulator, we compare the simulation results of a typical HBT, before modifying it and com paring it with empirical reported experiments. Then we examine the simulator on our modified proposed HBT to prove its wider frequency characteristics with better flatness and acceptable down conversion gain. Although the idea is examined in several GHz modulation, it may easily be extended to state of the art HBT cascode mixers in much higher frequency range.
作者 Hassan Kaatuzian Hadi Dehghan Nayeri Masoud Ataei Ashkan Zandi
机构地区 Photonics Research Laboratory(PRL)
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期35-40,共6页 半导体学报（英文版）
关键词 CASCODE down conversion gain MIXER opto-electronic photo HBT simulation cascode down conversion gain mixer opto-electronic photo HBT simulation
分类号 TN773 [电子电信—电路与系统]
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参考文献9

  • 1Darcie T. Sub carrier multiplexing for multiple-access light wavenetworks. J Lightwave Technol,1987, 5(8): 1103.
  • 2Liu C P, Seeds A J, Wake D. Two-terminal edge-coupledInP/InGaAs heterojunction phototransistor optoelectronic mixer.IEEE Microw Guided Wave Lett, 1997, 7(3): 72.
  • 3Betser Y, Lasri J, Sidorov V, et al. An integrated heterojunctionbipolar transistor cascode opto-electronic mixer. IEEE Trans Mi-crow Theory Tech, 1999, 47(7): 1358.
  • 4Sedra A S, Smith K C. Microelectronic circuits. USA: OxfordUniversity Press, 1997.
  • 5Liu W. Fundamentals of III-V devices. USA: John Wiley andSons, 1999.
  • 6Chandrasekhar S, Luanardi L M, Gnauck A H, et al. High-speedmonolithic pin/HBT and HPT/HBT photoreceivers implementedwith simple phototransistor structure. IEEE Photonics TechnolLett, 1993,5(11); 1316.
  • 7Betser Y, Ritter D. A single-stage three-terminal heterojunctionbipolar transistor optoelectronic mixer. J Lightwave Technol,1998,16(4): 605.
  • 8Hamm R A, Ritter D, Temkin H. A compact MOMBE growthsystem. J Vac Sci Technol, 1997, A12: 2790.
  • 9Kaatuzian H, Nayeri H D. Characteristics improvement of an in-tegrated HBT cascode opto-electronic mixer. AOE ConferenceProceedings SaK43.pdf, China, 2008.

同被引文献9

  • 1Hadi R A,Grzyb J,Heinemann B,et al.A terahertz detector array in a SiGe HBT technology.IEEE J Solid-State Circuits,2013,48(9):2002.
  • 2Terahertz Spectroscopy Applications(non-biological),http://www.npl.co.uk/electromagnetics/terahertz/,Dec 2009.
  • 3Ojefors E,Grzyb J,Zhao Y,et al.A 820 GHz SiGe chipset for terahertz active imaging applications.IEEE Int Solid-State Cir- cuits Conf,2011:224.
  • 4Konaka S,Yamamoto E,Sakuma K,et al.A 20-ps Si bipolar IC using advanced super self-aligned process technology with col- lector ion implantation.IEEE Trans Electron Devices,1989,36:1370.
  • 5Prasad S,Schumacher H,Gopinath A.High-speed electronics and optoelectronics devices and circuits.Cambridge University Press,2009.
  • 6Friis H T.A note on a simple transmission formula.Proc IRE,1946,34:254.
  • 7Sze S M,Ng K K.Physics of semiconductor devices.3rd ed.John Wiley Sc Sons,Inc,2007.
  • 8Davoodi H,Kaatuzian H.Base composition effects study on NBR current and current gain in SiGe HBT.Int J Mod Phys B,2013,27(19):1350097.
  • 9Kaatuzian H,Ghodsi H,Pashaki E R.Frequency performance improvement of HBT-optoelectronic mixers by means of phys- ical design alteration.The 5th International Conference on the Nano-Structures(ICNS5),Kish island,Iran,2014.

二级引证文献1

Journal of Semiconductors
2013年 第9期

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