摘要
We report a new monolithic structure of GaN-based light-emitting diode （LED） which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode （MLED） array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protec- tion, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.
We report a new monolithic structure of GaN-based light-emitting diode （LED） which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic lightemitting diode （MLED） array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protec- tion, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.
基金
supported by the National High Technology Research and Development of China(Nos.2011AA03A108,2011AA03A105)
