摘要
A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.
A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.
