摘要
A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.
基金
supported by the Beijing Natural Science Foundation, China (Grant No. 4112058)
