摘要
设计了64×64 AlGaN雪崩光电二极管(APD)阵列的读出电路,该读出电路采用了具有稳定探测器偏压能力的电容跨阻抗放大器(CTIA)结构。利用APD的等效电路模型,推导了电荷-电压转换因子(CVF)与积分电容、放大器增益的关系。为增加最大探测光电流、降低响应的非均匀性,利用上述关系得到积分电容为70fF,放大器增益为300。读出电路的地址选择采用移位寄存器来实现,并采用电压缓冲器实现信号的输出。
A readout integrated circuit （ROIC） coupled into 64X 64 A1GaN APD array was designed. The unit-cell input stage is implemented with capacitor transimpedance amplifier （CTIA） which could stabilize the detectors＇ bias voltage. Using the equivalent circuit of APD, the relationship of charge to voltage conversion factor （CVF） with the integration capacitance and the gain of amplifier is presented. To increase the maximum detectable photocurrent and reduce the response non-uniformity, the integration and 300, respectively. The address selection voltage buffer, respectively. capacitance and the gain of amplifier are set as 70 fF and signal output are realized by shift-registers and
出处
《半导体光电》
CAS
CSCD
北大核心
2013年第4期569-572,575,共5页
Semiconductor Optoelectronics
关键词
读出电路
雪崩光电二极管
CTIA
电荷-电压转换因子
read out integrated circuit
avalanche photodiodes
capacitor transimpedanceamplifier
charge-voltage conversion factor
