离子辅助沉积电子束蒸发Si基SiO_2薄膜的研究

Study on Performance of Si-based SiO_2 Optical Films with IBAD Electron Beam Evaporation

研究了离子辅助沉积(IBAD)电子束蒸发和传统电子束蒸发两种镀膜方式在Si(100)面基底所镀SiO2光学薄膜的特性。特别是在离子辅助沉积下,分析了不同工艺条件改变对SiO2光学薄膜的光学特性的影响。结果表明,无论表面形貌、折射率均匀性,还是湿度稳定性,离子辅助电子束蒸发都优于传统电子束蒸发的SiO2光学薄膜,在离子辅助沉积条件下,薄膜折射率在40～160℃范围随衬底温度的升高而提高,镀膜时真空度为1.5×10-3 Pa、沉积速率为5nm/s、离子源驱动电压为285.4V、离子源辅助气体分压比PAr∶PO=1∶1时,SiO2光学薄膜的光学特性最好。

Studied are the optical characteristics of SiO2 film based on Si（100）fabricated by electron beam evaporation with IBAD（ion beam assisted deposition） and without IBAD under different process conditions. It is found that, for surface morphology, refractive index uniformity and moisture stability, the films fabricated by electron beam evaporation with IBAD are better than the films processed without IBA, and in the temperature range of 40-160℃, the refractive index of SiO2 optical films is improved with substrate temperature increasing. When the pressure is 1.5 × 10-3 Pa, the deposition rate is 5 nm/s, the drive voltage of ion source is 285.4 V and the ratio of ion source PAr ：PO2=1 ： 1, SiO2 optical films obtain best optical characteristics.