带有TSV的硅基大功率LED封装技术研究

Package Technology of Silicon-based High-power LEDs with TSV

介绍了一种带有凹槽和硅通孔(through silicon via,TSV)的硅基制备以及晶圆级白光LED的封装方法。针对硅基大功率LED的封装结构建立了热传导模型,并通过有限元软件模拟分析了这种封装形式的散热效果。模拟结果显示,硅基封装满足LED芯片p-n结的温度要求。实验结合半导体制造工艺,在硅基板上完成了凹槽和通孔的制造,实现了LED芯片的有效封装。热阻测试仪测得硅基的热阻为1.068K/W。实验结果证明,这种方法有效实现了低热阻、低成本、高密度的LED芯片封装,是大功率LED封装发展的重要方向。

Introduced is the fabrication of silicon base with groove and TSV （through silicon via） for wafer level packaging of white LED. Based on the structure of silicon-based high-power LEDs, the heat transfer model is established and finite element software is employed to simulate and analyze the heat dissipation of this package. Simulation results show that the silicon base packaging meets the temperature requirement of LED chip p-n junction. Combined with semiconductor manufacturing process, the fabrication of the groove and TSV was carried out on the silicon substrate, realizing effective packaging of LED chips. The thermal resistance of silicon substrate measured by T3Ster is 1. 068 K/W. Experimental results show that this method is effective for realizing LED chip packaging with low cost, low thermal resistance and high density.